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In full wave rectifier, ripple frequency will be
Answer: D. 100 Hz In full wave rectifier, ripple frequency will be 100 Hz.
Answer: D. 100 Hz
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In semiconductor diode, depletion layer is formed
Answer: C. At the p-n junction In semiconductor diode, depletion layer is formed at the p-n junction.
Answer: C. At the p-n junction
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On increasing the reverse bias to a large value in p-n junction, the diode current
Answer: D. Suddenly increases On increasing the reverse bias to a large value in p-n junction, the diode current suddenly increases.
Answer: D. Suddenly increases
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In current conduction through N-type semiconductor
Answer: D. Electrons flow inside as well as outside In current conduction through N-type semiconductor electrons flow inside as well as outside.
Answer: D. Electrons flow inside as well as outside
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With reverse bias, current is due to
Answer: A. Minority carriers only With reverse bias, current is due to minority carriers only.
Answer: A. Minority carriers only
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In a transistor, the most doped section is
Answer: A. Emittor In a transistor, the most doped section is emittor.
Answer: A. Emittor
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In comparison to a half-wave rectifier, a full wave rectifier gives lower
Answer: C. Average output voltage In comparison to a half-wave rectifier, a full wave rectifier gives lower average output voltage.
Answer: C. Average output voltage
See lessIn comparison to a half-wave rectifier, a full wave rectifier gives lower average output voltage.
In n-type semiconductor minority, carriers are
Answer: D. Free holes only In n-type semiconductor, minority carriers are free holes only.
Answer: D. Free holes only
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In p-type semiconductor minority carriers are
Answer: C. Free electrons only In p-type semiconductor minority carriers are free electrons only.
Answer: C. Free electrons only
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With a reverse bias, the width of depletion layer
Answer: B. Increases With a reserve bias, the width of depletion layer increases.
Answer: B. Increases
See lessWith a reserve bias, the width of depletion layer increases.